Growing a crystal: lattice stacking and vacancies
Stack CsCl-type unit cells one by one, then remove ions at random to see how vacancies break perfect periodicity.
Goal
Count ions per unit cell through sharing, link cell-by-cell stacking to real crystal growth, and connect vacancy concentration to growth conditions.
Apparatus and reagents
Saturated alum or copper(II) sulfate solution, a seed crystal on a thread, beaker and filter paper for slow evaporation; the simulation explores lattice defects.
Procedure
- Start with one unit cell of the CsCl type: identify the body-centre ion and the eight corner ions.
- Increase “cells per edge” to 3: the crystal grows by adding complete unit cells to its faces.
- Toggle unit-cell edges and verify the corner sharing: 8 corners × 1/8 = 1 Cl per cell, plus 1 Cs at the centre.
- Raise the vacancy slider gradually: note holes appearing anywhere in the bulk, not only at surfaces.
What to observe
- Each new unit cell keeps the same motif: periodicity is preserved as the crystal enlarges.
- Vacancies show up as isolated missing spheres; a few percent is already visually obvious.
- The slider exaggerates defects: equilibrium vacancy fractions at room temperature are astronomically small.
Explanation
Real crystals grow by attaching atoms or ions at kinks and ledges (Kossel–Stranski–TLK picture). Point defects obey thermodynamics: n/N ≈ exp(−ΔGf/2k_BT) for Schottky pairs, so equilibrium vacancies are rare; rapid growth, quenching and impurities raise the real defect content.
History of the experiment
Chemists behind it
Virtual experiment: a simplified model to build intuition. It does not replace real lab work or safety training; never repeat chemistry at home without supervision.